Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• We report on the antimony (Sb) surfactant-mediated growth of InAs quantum dots (QDs) on a germanium-on-insulator-on-silicon (GeOI) substrate. A GaAs buffer layer of high structural quality and low surface roughness was first grown on a GeOI substrate. The dependence of Sb irradiation time on the photoluminescence intensity and total density of InAs/Sb:GaAs QDs grown on a GeOI was studied. High density (above $6\times 10^{10}$ cm-2) QDs with ground state emission in the 1.3 μm band at room temperature and narrow linewidth (32 meV) was obtained. Together, these results are very promising for potential realization of monolithically integrated QD-based lasers on silicon.

• 2011-04-25

著者

• Guimard Denis

  Institute For Nano Quantum Information Electronics University Of Tokyo

• Rajesh Mohan

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Arakawa Yasuhiko

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Faure Stephane

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Nishioka Masao

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Augendre Emmanuel

  CEA-LETI, MINATEC, Grenoble F38054, France

• Clavelier Laurent

  CEA-LETI, MINATEC, Grenoble F38054, France

関連論文

• Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
• Metal Organic Chemical Vapor Deposition Growth of High Spectral Quality Site-Controlled InAs Quantum Dots Using In situ Patterning
• Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition
• Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate (Special Issue : Solid State Devices and Materials (1))
• Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature

スポンサーリンク