Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition

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概要

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• We report the optical properties of site-controlled InGaAs quantum dots (QDs) embedded in GaAs nanowires (NWs) grown by selective metalorganic chemical vapor deposition (MOCVD). InGaAs/GaAs QD-in-NWs with various QD heights and In compositions are realized on patterned GaAs(111)B substrates in the form of InGaAs/GaAs heterostructures, and identified by structural analyses using scanning transmission electron microscopy, photoluminescence (PL) characterization, and numerical analyses of the band structure using a single-band effective mass approximation. Room temperature (RT) light emission is observed at 1.03 μm from InGaAs/GaAs QD-in-NWs which is indicative of the formation of high-quality InGaAs QD-in-NWs. Sharp emission peaks from exciton and biexciton of single In(Ga)As QD-in-NWs are observed by using μ-PL characterization at 10 K.

• 2012-11-25

著者

• Arakawa Yasuhiko

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Nishioka Masao

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Ota Yasutomo

  NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Tatebayashi Jun

  NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Ishida Satomi

  NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

• Iwamoto Satoshi

  NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

関連論文

• Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
• Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition
• Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate (Special Issue : Solid State Devices and Materials (1))

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