Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate (Special Issue : Solid State Devices and Materials (1))
スポンサーリンク
概要
著者
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Arakawa Yasuhiko
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ota Yasutomo
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iwamoto Satoshi
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Nakaoka Toshihiro
NanoQuine, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Tamura Yugo
NanoQuine, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Miyazawa Toshiyuki
NanoQuine, University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Watanabe Katsuyuki
NanoQuine, University of Tokyo, Meguro, Tokyo 153-8505, Japan
関連論文
- Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
- Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition
- Wavelength Tunable Quantum Dot Single-Photon Source with a Side Gate (Special Issue : Solid State Devices and Materials (1))