Nishioka Masao | NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
スポンサーリンク
概要
関連著者
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Arakawa Yasuhiko
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Nishioka Masao
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Guimard Denis
Institute For Nano Quantum Information Electronics University Of Tokyo
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Rajesh Mohan
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Faure Stephane
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Augendre Emmanuel
CEA-LETI, MINATEC, Grenoble F38054, France
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Clavelier Laurent
CEA-LETI, MINATEC, Grenoble F38054, France
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Ota Yasutomo
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Tatebayashi Jun
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Ishida Satomi
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Iwamoto Satoshi
NanoQUINE, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
著作論文
- Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
- Optical Properties of Site-Controlled InGaAs Quantum Dots Embedded in GaAs Nanowires by Selective Metalorganic Chemical Vapor Deposition