Rajesh Mohan | NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
スポンサーリンク
概要
関連著者
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Rajesh Mohan
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Guimard Denis
Institute For Nano Quantum Information Electronics University Of Tokyo
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Arakawa Yasuhiko
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Faure Stephane
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Nishioka Masao
NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan
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Augendre Emmanuel
CEA-LETI, MINATEC, Grenoble F38054, France
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Clavelier Laurent
CEA-LETI, MINATEC, Grenoble F38054, France
著作論文
- Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
- Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature