Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature

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概要

• 論文の詳細を見る
• Institute of Physicsの論文
• 2014-02-20

著者

• Rajesh Mohan

  NanoQuine, The University of Tokyo, Meguro, Tokyo 153-8505, Japan

関連論文

• Effect of Antimony on the Photoluminescence Intensity of InAs Quantum Dots Grown on Germanium-on-Insulator-on-Silicon Substrate
• Metal organic chemical vapor deposition growth of high density InAs/Sb:GaAs quantum dots on Ge/Si substrate and its electroluminescence at room temperature

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