Thermo-mechanical performance of Cu and SiO2 filled coaxial through-silicon-via (TSV)

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概要

• 論文の詳細を見る

• Analytical model for thermal stress in silicon induced by coaxial Through-silicon-via (TSV) is proposed. ANSYS is employed to verify the proposed model. It is shown that the average errors are ∼2.5% for Cu and SiO2 filled coaxial TSV. Based on the analytical model, thermo-mechanical performance of coaxial TSV is studied. Design guide lines for coaxial TSV are also given: 1) the smaller the sizes of metal parts, especially the outer metal shell, the better the thermo-mechanical performance; and 2) the dielectric size and the TSV height play unimportant roles on the thermal stress state.

• The Institute of Electronics, Information and Communication Engineersの論文

著者

• Liu Xiaoxian

  School of Microelectronics, Xidian University

• Zhu Zhangming

  School of Microelectronics, Xidian University

• YANG Yintang

  School of Microelectronic, Xidian University

• Ding Ruixue

  School of Microelectronics, Xidian University

• Wang Fengjuan

  School of Microelectronics, Xidian University

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