The impact of trapping centers on AlGaN/GaN resonant tunneling diode
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概要
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We report on a simulation for aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level trapping centers into the polarized AlGaN/GaN/AlGaN quantum well. Theoretical analysis reveals that the degradations of NDR characteristics in GaN based RTDs are actually caused by the combined actions of the activation energy and the trap density. Furthermore, the trapping centers with high activation energy play a dominant role in the degradation of negative differential resistance (NDR) characteristics.
著者
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Luo Jun
School Of Material Eng. Soochow University
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Hao Yue
School of Microelectronics, Xidian University
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Chen Haoran
School of Microelectronics, Xidian University
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Liu Xiaoxian
School of Microelectronics, Xidian University
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Zhu Zhangming
School of Microelectronics, Xidian University
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Yang Lin'an
School of Microelectronics, Xidian University
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- Erratum: The impact of trapping centers on AlGaN/GaN resonant tunneling diode [IEICE Electronics Express Vol. 10 (2013) No. 19 pp. 20130588]