A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer

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概要

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• A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant (DR) layer (DR-IGBT) is proposed in this letter. The DR layer in the emitter side which is formed by grinding after ultra-deep N+ diffusion helps to stored the carrier and improves the on-state voltage drop (Vce(SAT)). The DR-IGBT has a better trade-off between the breakdown voltage (BV) and Vce(SAT) than the carrier stored trench bipolar transistor (CSTBT). The doping profile of diffusion remnant layer makes the junction of the p-base/DR layer nearly linearly graded junction, which does not decline the BV too much. The depth of the diffusion remnant layer and N+ diffusion layer less impacts BV and Vce(SAT) unless the diffusion depth is reduced.

著者

• Zhang Bin

  Institute of Artificial Intelligence and Robotics, University of Xian Jiaotong

• Zhang Wei

  Institute For Materials Research Tohoku University

• Han Yan

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Zhang Bin

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Zhang Shifeng

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Zhu Dazhong

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Wu Huanting

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Liu Fang

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Zhang Shifeng

  Institute of Microelectronics & Optoelectronics, Zhejiang University

• Liu Fang

  Institute of Microelectronics & Optoelectronics, Zhejiang University

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