Preparation of Al–O–N Films by Electron Cyclotron Resonance Plasma-Assisted Chemical Vapor Deposition
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概要
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Al–O–N films were prepared by electron cyclotron resonance plasma-assisted chemical vapor deposition (ECR PACVD) using an AlBr3–N2O–N2–Ar–H2 gas system. The structure, composition, deposition rate and optical properties were investigated. The compositions were controlled by changing the N2O/(N2O+N2) flow rate ratio (R). The refractive index was varied from 1.60 to 2.10, and the cutoff photon energy at 10% transmittance (Eg/10) from 5.1 to 7.0 eV as the R changed from 0 to 1.0. The Al–O–N films were composed mainly of a mixture of Al2O3 and AlN. An aluminum oxynitride phase was also identified at R=0.2 to 0.53. The Al–O–N films contained a (001)-oriented hexagonal AlN phase at R=0.025, and the films were amorphous at R>0.05.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1999-06-15
著者
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Zhang Wei
Institute For Materials Research Tohoku University
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Hirai Toshio
Institute For Materals Research Tohoku University
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Goto Takashi
Institute For Material Research Tohoku University
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Hirai Toshio
Institute for Materials Research, Tohoku University, Sendai
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