Further studies of electroluminescence spectra of the n-GaP semiconductor electrode in relation with the surface-trapped holes.
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概要
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Electroluminescence spectra of an <I>n</I>-type gallium phosphide (<I>n</I>-GaP) electrode caused in the presence of oxidants such as [Fe(CN)<SUB>6</SUB>]<SUP>3−</SUP> and S<SUB>2</SUB>O<SUB>8</SUB><SUP>2−</SUP> were measured as functions of the electrode potential, the solution pH, and the kind of crystal faces. The electroluminescence spectra consisted of two bands; one was assigned to arise from electronic transitions in the bulk and the other from those at the surface. It was found that the position and the spectral shape of the luminescence band arising from the surface were quite independent of various experimental conditions, while its intensity was strongly dependent on them. These results were explained well by the view that the luminescence band is caused by "surface-trapped holes" acting as a precursor of anodic dissolution reaction of the electrode, as proposed previously. The physicochemical model of the surface-trapped hole was discussed on the basis of the above results.
- 公益社団法人 日本化学会の論文
著者
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Nakato Yoshihiro
Department Of Chemistry Graduate School Of Engineering Science And Research Center For Photoenergeti
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Tsubomura Hiroshi
Department of Applied Chemistry, Faculty of Engineering, Osaka University
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Tsumura Akira
Department of Chemistry, Faculty of Engineering Science, Osaka University
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