反応性イオンプレーティング法によるZrB2薄膜の合成

概要

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Zirconium boride (ZrB2) thin film has been synthesized on an aluminum substrate by reactive ion plating methods. The following four processes were applied to the synthesis of ZrB2 thin film. (1) Metallic zirconium and BCl3 gas were vaporized on an aluminum substrate by reactive ion plating. (2) A mixture of metallic zirconium and elemental boron was simultaneously deposited on an aluminum plate by ion plating. (3) ZrB2 thin film was prepared with a heating treatment of the multi-layer product after an alternating vaporization using metallic zirconium and elemental boron. (4) Metallic zirconium and B2H6 gas were vaporized on an aluminum plate by reactive ion plating.In these processes, it was found to be difficult to synthesize ZrB2 thin film in terms of the processes from (1) to (3). The process (4) using metallic zirconium and B2H6 gas as a source of boron was found to be more effective for the preparation of ZrB2 thin film when the synthesis was carried out under optimum conditions of a substrate temperature of 410K and a bell-jar pressure of 0.3Pa.
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