電流遮断法を応用したエチレングリコール中の水素化アモルファスシリコン陽極酸化の解析

概要

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The anodic oxidation process of a-Si: H is a basic feature of integrated circuit technology. In the thermal oxidation method, the hydrogen will separate from the a-Si-to-H bond at a high temperature, so that anodic oxidation is well suited to the growth of film on amorphous silicon by plasma-chemical vapor deposition. Nevertheless, the electrolytic anodization process of a-Si: H film has not yet been investigated.A current interrupter technique was used to measure the resistance polarization, the differential capacity of the electric double layer, and the activation energy in the anodic oxidation of a-Si: H, and it has also been applied to the analysis of anodic oxidation in a variety of metals.The apparatus used was built using a mercury-wetted electromagnetic relay combined with an integrated circuit. The circuit based on this design made contact with an anodic electrode of a-Si: H and a cathodic electrode of platinum in ethyleneglycol solution. The characteristics of anocic behavior in SiO2 on a-Si were checked through the use of this system.The output waveforms of the transient phenomena were traced on a digital memory scope, and the data was sent to a computer over a GP-IB interface.In general, the differential capacity increases as the temperature rises at 2.5∼10mA cm-2. The Arrenius plots fully satisfied the linear relationship, and the calculated value of activation energy was about 14.5kJ mol-1.
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