電子ビーム蒸着法による層状性GaSe薄膜作製

概要

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The growth of thin GaSe film on fused silica substrate is investigated using the electron beam deposition method. The thin GaSe films are evaluated by several measurements of the x-ray diffraction, the nano-probe microscopy and the temperature dependence of electrical conductivity. It is found that the GaSe films deposited at R.T. and 200°C have amorphous structures, while those at 300-500°C have polycrystalline structures with c-axis perpendicular to the substrate surface. The activation energy of the crystal growth of GaSe is discussed with the temperature dependence of the average lateral grain size from the surface morphologies. It is obtained that the activation energies of the thermally activated charge transport are 0.70 eV for amorphous film and 0.41 eV for crystalline film.
日本真空協会の論文
2003-03-20