蒸着チタン薄膜の電気的特性 : 蒸着条件との関連において

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The electrical properties of vacuum-deposited titanium thin films on the glass substrate are studied experimentally in relation to some physical conditions of deposition. When the evaporation of titanium and deposition of the film on the substrate is held under the conditions in which the atmosphere has a pressure less than 5 × 10-8 Torr and the substrate is intentionally not heated, the resistivity of the films is converged into a constant value of nearly 90 μΩ-cm independent of the sort of atmosphere gases, which value is about twice as large as that of the bulk titanium metal. As the pressure of the gas introduced to the vacuum chamber during deposition is increased, the resistivity of the produced films also increases in the case of oxygen, nitrogen and air; however, it shows almost no increase in the case of argon until its pressure reach 5 × 10-5 Torr. When the substrate temperature during deposition is increased, the resistivity of the produced film reveals indistinct minimum value in the gently sloping change at about 230°C temperature and its temperature coefficient becomes maximum at the same temperature. A temperature characteristic of resistance of ultra-high vacuum deposited film at 400°C temperature substrate shows reversible variation by the heat-treatment in vacuum; however, that of the deposited film on the substrate which is not heated shows a small irreversible one. The poorer the vacuum during the deposition is, the more remarkable is the degree of irreversibility, and the irreversible change is interpreted by the crystallization of the films during heating. The relation between the resistivities of the above described films and their temperature coefficients shows a small deviation from the Matthiessens law in a fine straight line. This deviation will be interpreted by the island or grain structure of the thin film and by the gas adsorption on the grain boundary.
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蒸着チタン薄膜の電気的特性 : 蒸着条件との関連において

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