真空蒸着法によるシリコンのエピタキシャル成長

概要

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Silicon single crystal films have been grown on ruby substrates by vacuum evaporation method. The (111) silicon film was parallel to the (0001) ruby substrate. The apparatus and experimental procedure used are described. Epitaxial temperature by vacuum evaporation method was lower than that of chemical deposition method. In case of the substrate temperature 900°C and the evaporation rate 26 micro-grams/sec, obtained the p-type silicon single crystal films whose mobility of 200cm<SUP>2</SUP>/volt-sec equates almost half value of bulk silicon.
日本真空協会の論文