部分電離法によるSiエピタキシャル膜へのGa, Sbのドーピング効率

概要

論文の詳細を見る
The effect of ions on the carrier concentration of Ga- or Sb-doped silicon epitaxial films grown by part ionized vapor deposition on (111) silicon substrates is investigated. The crystalline quality of films is examined by transmission electron microscopy and 350 keV proton backscattering method. The doping efficiency into these films is much higher than that of the films grown by ordinary vacuum deposition. The carrier concentration of the film increases proportionally to the ion contents in silicon vapor flow, and depends on the substrate (target) voltage with the value of V<SUB>max</SUB> which gives the maximum carrier concentration. Ga- or Sb-doped films show the different values of V<SUB>max</SUB>, respectively. This phenomenon is able to explain by means of the charge exchange process between silicon ions and dopant atoms in the silicon vapor flow.
日本真空協会の論文