反応性イオンエッチングによるSi表面の損傷とNF3ガスによる回復効果

概要

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Bombardment damage on a silicon surface is induced by reactive ion etching (RIE) with a CF4 discharge of 13.56 MHz in a parallel plate reactor. The damage was removed by the successive treatment with an NF3 discharge. The ohmic contact of Au/p-Si, which was converted to the rectifying contact by ion bombardment in RIE with CF4, was recovered by etching with NF3, and the damage in rectifying characteristics of Au/n-Si contact by CF4 plasma etching also was recovered by NF3 plasma etching. The recovering effect was obtained by removing the damaged layer of 1.7μm thickness and 15nm thickness for the cathode coupling discharge and the anode coupling discharge respectively. In conclusion, the recovery by the anode coupling discharge is more effective than that by the cathode coupling one.
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