CMOS cross-coupled charge pump with improved latch-up immunity
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概要
- 論文の詳細を見る
In this paper, a novel CMOS charge pump with substantially improved immunity to latch-up is presented. By utilizing a dedicated bulk pumping and blocking (DBPB) technique, the proposed charge pump achieves greatly reduced forward voltage of source/drain-substrate junction of transistors, resulting in decreased charge loss and increased latch-up immunity. Comparison results indicated that the maximum bulk forward voltage of the proposed charge pump was less than 0.05V (88% improvement) for zero output current during power-up, and less than 0.12V (88% improvement) regardless of the amount of output current during ordinary pumping operation.
- The Institute of Electronics, Information and Communication Engineersの論文
著者
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Kang Yong-gu
School Of Information And Communication Eng. Sungkyunkwan Univ.
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Lee Chilgee
School Of Electrical And Computer Engineering Sung Kyun Kwan University
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Kang Yong-Gu
School of Information and Communication Eng., Sungkyunkwan Univ.
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Jun Young-Hyun
DRAM Design Team, Memory Division, Samsung Electronics
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Kim Joung-Yeal
School of Information and Communication Eng., Sungkyunkwan Univ.
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Kong Bai-Sun
School of Inform. and Comm. Eng., Sungkyunkwan University
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Han Tae
School of Inform. and Comm. Eng., Sungkyunkwan University
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Park Su-Jin
School of Information and Communication Eng., Sungkyunkwan Univ.
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