Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9
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概要
- 論文の詳細を見る
Homojunction diodes were fabricated by doping of phosphorus to n-type Cu-In-Se thin films. The junction prepared by P implantation at the energy of 50 keV with the dose of 1 x 10(15) ions/cm 2 showed a rectification ratio of more than 100. Conduction in Cu-In-Se thin films, whose crystal structure is of the chalcopyrite type, changes from n- to p-type in such a way that group V elements (N, P, Sb, or Bi) substitute for Se in the film.
- American Institute of Physicsの論文
- 1993-04-05
著者
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Negami Takayuki
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Nishitani Mikihiko
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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