X-Ray Photoelectron-Spectroscopy of Cuinse2
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概要
- 論文の詳細を見る
In x-ray photoemission, we have observed negative shifts of the valence-band maximum with conduction-type conversion from p to n type, induced by a decrease in the [Cu]/[In] ratio of the Cu1 +/- delta-In1 -/+ delta-Se2 thin films, deposited by a molecular-beam method. We found no evidence of Cu 2p poorly screened peaks, representing Cu d9 electron configuration in the p-type films. Holes in the p-type films are located at the d-p antibonding orbital, dominated by the Se p state in the crystal. The binding energy of the Cu d state, dominating the d-p bonding orbital, is larger than that of the Se p state.
- American Physical Societyの論文
- 1992-04-15
著者
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Negami Takayuki
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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Nishitani Mikihiko
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
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