X-Ray-Fluorescence Spectroscopy of Cu-In-Se Chalcopyrite-Structure Thin-Films
スポンサーリンク
概要
- 論文の詳細を見る
In x-ray fluorescence spectroscopy we have observed a positive shift of the Cu L(alpha) x-ray energy with an increase of the number of excess electrons in the electron-doped Cu-In-Se chalcopyrite-structure thin films. This positive shift can be reproduced well by the energy calculation using the Hartree-Fock-Slater method by taking into account the Cu 4s-3d rehybridization effect. We discovered that the excess electrons entered into the lower conduction band dominated by the Cu 4s orbital in the n-type Cu-In-Se thin films deposited by a molecular-beam method.
- American Physical Societyの論文
- 1992-09-15
著者
-
Negami Takayuki
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
-
Nishitani Mikihiko
Central Research Laboratories Matsushita Electric Ind. Co. Ltd.
関連論文
- Chemical and Structural Characterization of Cu(In, Ga)Se_2/Mo Interface in Cu(In, Ga)Se_2 Solar Cells
- Surface Characterization of Chemically Treated Cu(In, Ga)Se_2 Thin Films
- Preparation of Conductive and Transparent Thin Films by Argon Ion Beam Sputtering of Zinc Oxide in Atmosphere Containing Hydrogen
- High Energy Spectroscopy of Thin Films of Chalcopyrite Structure Cu-In-Se and Related Materials
- Wall Heating Effect on Crystallization of Low-Temperature Deposited Silicon Films from an Inductuvely-Coupled Plasma
- Lower Temperature Deposition of Polycrystalline Silicon Films from a Modified Inductively Coupled Silane Plasma
- LOW-TEMPERATURE FORMATION OF poly-Si FILMS BY INDUCTIVELY-COUPLED SILANE PLASMA
- Microstructure of Cu(In,Ga)Se_2 Films Deposited in Low Se Vapor Pressure
- MoSe_2 layer formation at Cu(In, Ga)Se_2/Mo Interfaces in High Efficiency Cu(In_Ga_x)Se_2 Solar Cells
- Preparation of Device-Quality Cu(In, Ga)Se_2 Thin Films Deposited by Coevaporation with Composition Monitor
- Preparation of Ordered Vacancy Chalcopyrite-Type CuIn_3Se_5 Thin Films
- Coevaporation Effect of Te on P-Type CdTe:Cu Film Formation
- Preparation Chalcopyrite-type Semiconductor Films by Sulfuration of Oxide Films
- Homojunction Diode of Cuinse2 Thin-Film Fabricated by Nitrogen Implantation
- Cuinse2 Homojunction Diode Fabricated by Phosphorus OP9
- X-Ray-Fluorescence Spectroscopy of Cu-In-Se Chalcopyrite-Structure Thin-Films
- X-Ray Photoelectron-Spectroscopy of Cuinse2
- Preparation and Characterization of CuInSe_2 Thin Films by Molecular-Beam Deposition Method
- Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms
- Enhanced Electrical-Conductivity of Zinc-Oxide Thin-Films by Ion-Implantation of Callium, Aluminum, and Boron Atoms