Enhanced Conductivity of Zinc-oxide thin-films by Ion-Implantation of Hydrogen-atoms
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概要
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Enhancement of the conductivity of zinc oxide through doping with hydrogen atoms was examined by using ion implantation of highly resistive thin films deposited by rf magnetron sputtering at room temperature. With a doping of 1 X 10(17) atoms cm-2, the conductivity after annealing at 200-degrees-C in an N2 atmosphere at 1 atm rose from the initial 1 X 10(-7) OMEGA-1 cm-1 to 5.5 X 10(2) OMEGA-1 cm-1.
- American Institute of Physicsの論文
- 1994-05-23
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