ファウシュモトロンの電子運動の軌道包絡線

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概要

• 論文の詳細を見る

• When electrons travel in a longitudinal direction within a transversal parabolic potential distribution undergoing the effect of high frequency field, a disturbance is induced in the electron beam and propagats constituting the two waves, fast- and slow-waves, called the simple harmonic motion waves. The fast electron wave of this type is not only used as a parametric amplifier, but also a microwave oscillator without a slow wave circuit. We call these microwave devices by the ter of the "Fawshmotron", especially the Parametric amplifier by the "A-type "Fawshmotron". A theoritical investigation of the pumping region of this device has been described with both the coupled mode and the electron motion theories. The sign of phase velocity of the fast wave is either positive or negative depending on wether ωo/ω is greater or less than unity. The microwave devices employing an interaction between the fast wave with positive phase velocity and the circuit wave are called the "B-type Fawshmotron". On the other hand, the "C-type Fawshmotron" uses the interaction between the fast wave with negative phase velocity and the circuit wave. The operation properties of these devices were described both theoritically and experimentaly. The purpose of this paper is conserned with an envelope of the electron orbit in the interaction region to the various types of the "Fawshmotron". For the "A-type Fawshmotron", these curves are given for quantities the square of frequencies ratio A and voltage modulation coefficients. For the "B- and C-type Fawshmotron" these curves are also given for the initial phase angles of the electron injection into the interaction space.

• 奈良教育大学の論文

著者

• 吉田 武尚

  奈良教育大学

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