分光偏光解析等によるSiC酸化膜の評価

概要

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The characterization of oxidized films on SiC and oxide/SiC interfaces has been carried out by use of spectroscopic ellipsometry and XPS in order to make clear their dependences on the oxidation process. It was found that the refractive indices of the interfaces depend both on the oxide formation method and the method of post oxidation annealing. We found that the refractive indices for the oxide films deposited by low temperature CVD have lower interface refractive indices than those for dry oxidation and pyrogenic oxidation, and those for post oxidation annealed in· Ar atmosphere are lower that those for quenched samples. These results correspond well with the tendencies of interface state densities obtained by electrical measurements for the samples with the corresponding oxidation processes, except the cases of the oxidation processes containing hydrogen orland hydro-oxide base, like pyrogenic oxidation and wet re-oxidation. The XPS measurements have also shown the changes in the composition and bonding nature at the interfaces by the oxidation processes. We have shown the capability of microscopic FT -IR measurements for obtaining carrier density and mobility mapping of bulk SiC wafers.
埼玉大学地域共同研究センターの論文