分光偏光解析等によるSiC酸化膜の評価

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We have developed the method of obtaining the refractive indices of SiC/oxide interfaces by use of spectroscopic ellipsometry, and by using this method we have characterized SiC/oxide interfaces obtained by various oxidation methods and/or post oxidation annealing (POA). We have designed and fabricated the system with which in situ spectroscopic ellipsometry measurements can be carried out. We have observed the initial oxidation stage of SiC. We have also observed the changes of the refractive indices of interfaces by annealing in Ar atmosphere (Ar POA). The changes of atomic bond states at the interface by Ar POA were also observed by angle-resolved XPS and UPS, and compared with the results obtained form optical measurements and C-V measurements. We have developed the measurement method of obtaining carrier density and mobility distribution in SiC wafers by use of microscopic FT-IR. We have shown that the values obtained by this method well agree with those obtained from Hall measurements, suggesting that the method is useful to characterize electrical properties of SiC wafers quantitatively, non-destructively and without contact.
埼玉大学地域共同研究センターの論文