Cz法融液の電流-磁場印加による流動制御(反応・多相系電磁(2),一般講演)

概要

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The silicon single crystal is use for the semiconductor device and it is mainly manufactured by the Czochralski crystal growing method. Under the Cz method, the forced convection and natural convection caused by the crystal rotation and the temperature difference between the crystal and crucible. In traditional system, the melt convection is controlled by the heater power, the crystal and crucible rotation. We apply Lorentz force to control the melt convection in this study, the Lorentz force accelerates the liquid metal under the magnetic field and the direct electric current. The amplitude of electric current and the strength of magnetic field are varied, the transient velocity of fluid is measured. The velocity and the rotating direction of melt were varied by the induction of electric current and magnetic field.
日本流体力学会の論文
2009-09-02