M1-9 集束イオンビーム化学気相成長法における高精度描画技術確立のための3次元ナノ構造成長特性評価(M1 製作技術,材料)

概要

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In this study, characteristics evaluations of several growths modes on three-dimensional (3-D) nanostructure growth using focused-ion-beam chemical-vapor-deposition (FIB-CVD) was carried out to optimize the algorithm of the 3-D computer pattern generator. As a result, we found that the FIB-CVD had a hopping growth mode as a unique growth mode. However, the growth mechanism of a hopping nanostructure could not be explained completely. Therefore, we carried out the detailed evaluations of a hopping growth on FIB-CVD. As a result, hopping growth was induced by a gas density distribution on the vertical direction. In addition to this, the change in the positional relationship between the Ga FIB and the growth structure is induced the formation of a bridge bent structure and the change in the growth direction of the upper structure. Furthermore, the deposition onto the substrate was caused by the Ga^+ FIB's tail (directly irradiated beam). A hopping growth structure was formed by the repetition of these growth processes.
一般社団法人日本機械学会の論文
2009-10-15