S0305-2-4 固体電解質薄膜における残留応力と導電特性の関係(SOFC構成材料の信頼性(2))

概要

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Relationship between residual stress and electrical properties in solid electrolyte thin films are studied. Solid electrolyte thin films of Y-doped BaZrO_3 are fabricated using pulsed laser deposition (PLD) method on single crystal substrates. In the films, high residual stress in in-plain direction to the substrates is introduced during the PLD process. The value of residual stress determined using XRD is sometimes over 1 GPa in accordance with PLD conditions, and it is compressive stress. In the Y doped BaZrO_3 thin films, clear relationship between residual stress and electrical properties in in-plain direction are observed. As lattice volume becomes small, i.e. residual stress becomes high, activation energy become small and electrical conductivity become high. Electrical conduction of Y doped BaZrO_3 thin films is due to proton hopping, and generally long hopping distance, i.e. large lattice volume, is thought to obstruct proton hopping. Therefore, observed relationship is suggested to be influenced by the change of proton hopping distance caused by the residual stress.
一般社団法人日本機械学会の論文
2009-09-12