TiおよびVを添加したCrSi2の熱電特性

概要

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CrSi2-CoSi thermoelectric devices were made experimentally for use in air at high temperatures more than 1000°C. For further improvement of these devices, CrSi2 sintered body added with Ti and V were manufactured to realize efficient CrSi2 with the optimum carrier density. The thermoelectric power of the sintered CrSi2 was increased, while the resistivity was decreased by Ti and V addition. The thermoelectric power of the sinteredCr0.995V0.005Si2 was 100 μVK−1 at room temperature, which was rather higher than that of pure CrSi2, namely, 84 μVK−1. The resistivity of the V added sample was 10.0 μΩm, which was lower than that of the sample without addition, i.e., 15.9 μΩm, and the power factor of the V added sample consequently 2.3 times higher value, 1.01mWm−1K−2 than that of the sample without addition, 0.44 mWm−1K−2.
サレジオ工業高等専門学校の論文