C232 ガス溶解に伴う三相界線近傍の液膜挙動に関する研究(界面)

概要

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It is well known that particles remaining on silicon wafer form a streak line in cleansing and drying process. To clarify the reason for this and to obtain new findings for the remaining particles, liquid film behavior in the vicinity of three phase contact line in cleansing and drying process has been observed using a CCD camera. The results show that there are two patterns of liquid film appearing just above the three phase contact line; streak-like liquid film and sawtooth one. The streak-like liquid film frequently appears when a comparatively small wave hits on the wafer surface. When a wave hits on the wafer surface, a crest of the wave runs along the surface lifting up the three phase contact line, and when the lifted contact line goes down, the liquid close to the contact line is expanded and drawn away from the bulk liquid. If the remaining liquid film includes particles, it is considered that the particles remain streaked after evaporation of the liquid film.
一般社団法人日本機械学会の論文
2007-11-23