次世代HV-IGBT開発(パワーエレクトロニクス及び半導体電力変換一般)

概要

論文の詳細を見る
In order to improve the total performance of the 3300〜6500V High-Voltage (HV) IGBT, a double combination concept is adopted: an "enhanced planar gate cell" for the emitter side and a "Light Punch-Through (LPT)" structure for the collector side. The LPT-Planar IGBT demonstrates lower on-state voltage (V_<CE>(sat)), lower turn-off loss (E_<OFF>) and lower junction leakage current (>398K) with higher safety operating area (SOA) capability than that of conventional Planar IGBT. In addition, this device achieves a widely operating junction temperature (i.e. 218〜423K) of the HV-IGBT without the snap-back phenomenon (<298K) and thermal destruction (>398K). From the viewpoint of low overall loss, high SOA capability and widely operating junction temperature, the LPT-Planar IGBT is a promising candidate for HV-IGBT.
社団法人電子情報通信学会の論文
2008-10-16