SiC MESFET power amplifier for 3.6GHz-3.8GHz WiMAX application(Session8B: High-Frequency, Photonic and Sensing Devices)
スポンサーリンク
概要
- 論文の詳細を見る
Silicon-carbide (SiC) devices have received increased attention for high-power, high-speed, high temperature, and radiation-hard applications due to their superior properties, including wide band-gap, high saturated electron velocity, high breakdown electric field strength, and high thermal conductivity. The high breakdown field allows silicon carbide devices to operate at much higher voltages than silicon (Si) or gallium-arsenide (GaAs) devices and to have significant RF output power at high temperatures. The high thermal conductivity implies that silicon carbide has high-power handling capability. This paper describes the two-stage 5W broadband power amplifiers using a commercially available silicon carbide Metal Semiconductor Field Effect Transistors (MESFETs), Cree CRF-24010F. The frequency range covers 3.6GHz to 3.8GHz for using WiMAX base-station application. The 2nd and 3rd order harmonic cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase isolation and stability throughout the bandwidth. At V_<DS>=24V and I_<DS>=840mA (two stage), 10±1dB power gain, average 37dBm (5W) output power, 24% power added efficiency have been achieved in the two-stage design. The results are being discussed and compared with simulations.
- 社団法人電子情報通信学会の論文
- 2008-07-02
著者
-
BURM Jinwook
Dept. of Electronic Engineering, Sogang University
-
Burm Jinwook
Dept. Of Electronic Engineering Sogang University
-
Kim Jaekwon
Dept. Of Electronic Engineering Sogang University
-
Kim Jaekwon
Dept. Of Electrical & Computer Engineering The University Of Texas At Austin
-
Kim Kyunghwan
Dept. of Electronic Engineering, Sogang University
-
Kim Kyunghwan
Dept. Of Electronic Engineering Sogang University
関連論文
- A Phase Noise Optimized 4GHz Differential Colpitts VCO
- A sub-harmonic RF transmitter architecture with simultaneous power combination and LO leakage cancellation (Silicon devices and materials)
- A sub-harmonic RF transmitter architecture with simultaneous power combination and LO leakage cancellation (Electron devices)
- A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation(Session 3B : High Speed and High Frequency Applications 1)
- A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation(Session 3B : High Speed and High Frequency Applications 1)
- A Phase Noise Optimized 4GHz Differential Colpitts VCO
- Blind Vector Channel Estimation for Differentially Modulated Systems with Transmit Diversity(Wireless Communication Technology)
- SiC MESFET power amplifier for 3.6GHz-3.8GHz WiMAX application(Session8B: High-Frequency, Photonic and Sensing Devices)
- SiC MESFET power amplifier for 3.6GHz-3.8GHz WiMAX application(Session8B: High-Frequency, Photonic and Sensing Devices)
- A 0.18μm CMOS over 10Gb/s 10-PAM Serial Link Receiver
- A CMOS over 12.8Gb/s 10-PAM transmitter for chip-to-chip communications
- A 0.18μm CMOS over 10Gb/s 10-PAM Serial Link Receiver
- A CMOS over 12.8Gb/s 10-PAM transmitter for chip-to-chip communications
- Chip design of a Successive Approximation A/D Converter for a Structure Monitoring System(Session8A: Si Devices III)
- Chip design of a Successive Approximation A/D Converter for a Structure Monitoring System(Session8A: Si Devices III)
- A Decision-Directed Receiver for Alamouti Coded OFDM Systems(Wireless Communication Technology)
- A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation