液相析出法によるTb^<3+>ドープZrO_2薄膜の合成とその発光特性(<特集>希土類系物質の精密合成,形態制御および機能物性)

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Terbium (III) ion-doped zirconia (ZrO_2 : Tb^<3+>) thin films have been directly prepared on soda-lime glass and Si wafer by the liquid phase deposition (LPD) method. The stabilization of Tb^<3+> ion in the LPD reaction solution, containing fluoride anions, was successfully achieved by using DTPA (diethylenetriaminepentaacetic acid) as a masking reagent. Preparation composition of ZrO_2 : Tb^<3+> thin film was determined by inductively coupled plasma-atomic emission (ICP-AES) microscopy analysis. The structural and luminescence properties for the deposited films were analyzed. After annealed at 900℃, the deposited film shows characteristic strong emission assigned to ^5D_4→^7F_5 of Tb^<3+> under CT band excitation.
2007-10-01