半導体デバイス上の金属イオン残渣除去洗浄における電解酸化水の基本性能

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This paper describes how to removal residual of metal ion which is in the semiconductor device using electrolytically oxidized water. First, it evaluated about the influence of the electrolytically oxidized water on the epoxy-radical board which is the substrate material of the semiconductor device. Next, as for the copper plating surface on the epoxy-radical material and the oxygen-free copper board, it experimented on the etching using electrolytically oxidized water and hydrochloric acid solution. Moreover, it did experimental reviewing about the relation between the specific of electrolytically oxidized water and the etching speed of copper plating. As results of the study, following could be identified. (1) Dilute NaCl electrolytically water doesn't have a bad influence on the surface of epoxy-radical material like hydrochloric acid solution. (2) Electrolytically oxidized water has the etching ability which is higher than hydrochloric acid solution to copper plating surface. (3) The etching speed of electrolytically oxidized water depends on the specific value. The bigger the value of ORP/pH is, the bigger the etching speed becomes. (4) The etching speed of electroplating is big compared with electroless plating.
社団法人精密工学会の論文
2007-08-05