Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II,AWAD2006)

スポンサーリンク

概要

• 論文の詳細を見る

• A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect-transistors (MOSFETs) alternately, allows current quantization at 20K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

• 一般社団法人電子情報通信学会の論文
• 2006-06-26

著者

• YAMAGUCHI H.

  NTT Basic Research Laboratories, NTT Corporation

• ONO Y.

  NTT Basic Research Laboratories, NTT Corporation

• NISHIGUCHI K.

  NTT Basic Research Laboratories, NTT Corporation

• FUJIWARA A.

  NTT Basic Research Laboratories, NTT Corporation

• Nishiguchi K.

  Ntt Basic Research Laboratories Ntt Corporation

• Wu N.

  Institute Of Semiconductor Chinese Academy Of Sciences

• Zhang W.

  NTT Basic Research Laboratories

• Inokawa H.

  Shizuoka University

• Takahashi Y.

  Hokkaido University

• Inokawa H.

  Shizuoka Univ.

• Ono Y.

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A.

  Ntt Basic Research Laboratories Ntt Corporation

関連論文

• Magnetopiezoresistance effects in an InAs/AlGaSb nanomechanical resonator with extremely small power consumption
• Two-Dimensional Friedel Oscillations and Electron Confinement to Nanostructures at a Semiconductor Surface
• Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors
• 21aTA-7 Single-electron transport through single and double silicon quantum dots
• Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II,AWAD2006)
• Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II)
• Infrared detection with silicon nano transistors
• Charge-state control of phosphorus donors in SOI MOSFET
• Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
• Spin resolved spectroscopy of upper subbands in two-dimensional electron systems by direct transport measurements
• Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic
• Single-Electron Transistor and Current-Switching Device Fabricated by Vertical Pattern-Dependent Oxidation (V-PADOX)
• A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector
• Three Dimensional Size Evaluation of Island in Si Single-Electron Transistor

もっと見る 閉じる

スポンサーリンク