Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II)

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概要

• 論文の詳細を見る

• A single-electron turnstile and electrometer circuit was fabricated on a silicon-on-insulator substrate. The turnstile, which is operated by opening and closing two metal-oxide-semiconductor field-effect-transistors (MOSFETs) alternately, allows current quantization at 20K due to single-electron transfer. Another MOSFET is placed at the drain side of the turnstile to form an electron storage island. Therefore, one-by-one electron entrance into the storage island from the turnstile can be detected as an abrupt change in the current of the electrometer, which is placed near the storage island and electrically coupled to it. The correspondence between the quantized current and the single-electron counting was confirmed.

• 社団法人電子情報通信学会の論文
• 2006-06-26

著者

• YAMAGUCHI H.

  NTT Basic Research Laboratories, NTT Corporation

• ONO Y.

  NTT Basic Research Laboratories, NTT Corporation

• NISHIGUCHI K.

  NTT Basic Research Laboratories, NTT Corporation

• FUJIWARA A.

  NTT Basic Research Laboratories, NTT Corporation

• Nishiguchi K.

  Ntt Basic Research Laboratories Ntt Corporation

• Wu N.

  Institute Of Semiconductor Chinese Academy Of Sciences

• Zhang W.

  NTT Basic Research Laboratories

• Inokawa H.

  Shizuoka University

• Takahashi Y.

  Hokkaido University

• Inokawa H.

  Shizuoka Univ.

• Ono Y.

  Ntt Basic Research Laboratories Ntt Corporation

• Fujiwara A.

  Ntt Basic Research Laboratories Ntt Corporation

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