A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector

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概要

• 論文の詳細を見る
• 1998-09-07

著者

• FUJIWARA A.

  NTT Basic Research Laboratories, NTT Corporation

• Murase K.

  Ntt Basic Research Laboratories

• TAKAHASHI Y.

  NTT Basic Research Laboratories

• YAMAZAKI K.

  NTT Basic Research Laboratories

• NAMATSU H.

  NTT Basic Research Laboratories

• KURIHARA K.

  NTT Basic Research Laboratories

• Fujiwara A.

  Ntt Basic Research Laboratories Ntt Corporation

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• A Si Memory Device Composed of a 1D-Wire MOSFET Switch and a Single-Electron-Transistor Detector
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