ONO Y. | NTT Basic Research Laboratories, NTT Corporation
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概要
関連著者
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ONO Y.
NTT Basic Research Laboratories, NTT Corporation
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Ono Y.
Ntt Basic Research Laboratories Ntt Corporation
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NISHIGUCHI K.
NTT Basic Research Laboratories, NTT Corporation
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FUJIWARA A.
NTT Basic Research Laboratories, NTT Corporation
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Nishiguchi K.
Ntt Basic Research Laboratories Ntt Corporation
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Inokawa H.
Shizuoka Univ.
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Fujiwara A.
Ntt Basic Research Laboratories Ntt Corporation
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YAMAGUCHI H.
NTT Basic Research Laboratories, NTT Corporation
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Takahashi Y.
Hokkaido University
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Wu N.
Institute Of Semiconductor Chinese Academy Of Sciences
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Zhang W.
NTT Basic Research Laboratories
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Inokawa H.
Shizuoka University
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INOKAWA H.
Research Institute of Electronics, Shizuoka University
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Fujisawa T.
NTT Basic Research Laboratories
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Khalafalla M.
Ntt Basic Research Laboratories Ntt Corporation
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Tabe M.
Research Institute Of Electronics Shizuoka University
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Nuryadi R.
Research Institute Of Electronics Shizuoka University
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Liu H.
NTT BRL
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Hirayama Y.
SORST-JST
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TAKAHASHI Y.
Graduate School of Information Science and Technology, Hokkaido University
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INOKAWA H.
NTT Basic Research Laboratories, NTT Corporation
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HORIGUCHI S.
Akita university
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Ikeda H.
Research Institute Of Electronics Shizuoka University
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MORARU D.
Research Institute of Electronics, Shizuoka University
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YOKOI K.
Research Institute of Electronics, Shizuoka University
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Moraru D.
Research Institute Of Electronics Shizuoka University
著作論文
- Identification of Single and Coupled Acceptors in Silicon Nano Field-Effect Transistors
- 21aTA-7 Single-electron transport through single and double silicon quantum dots
- Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II,AWAD2006)
- Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II)
- Infrared detection with silicon nano transistors
- Charge-state control of phosphorus donors in SOI MOSFET
- Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires