Tabe M. | Research Institute Of Electronics Shizuoka University
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概要
関連著者
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Tabe M.
Research Institute Of Electronics Shizuoka University
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Nuryadi R.
Research Institute Of Electronics Shizuoka University
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Ikeda H.
Research Institute Of Electronics Shizuoka University
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MORARU D.
Research Institute of Electronics, Shizuoka University
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Moraru D.
Research Institute Of Electronics Shizuoka University
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BURHANUDIN Z.
Research Institute of Electronics, Shizuoka University
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Burhanudin Z.
Research Institute Of Electronics Shizuoka University
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YOKOI K.
Research Institute of Electronics, Shizuoka University
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ONO Y.
NTT Basic Research Laboratories, NTT Corporation
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YAMANO R.
Research Institute of Electronics, Shizuoka University
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ISHINO T.
Research Institute of Electronics, Shizuoka University
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ISHIKAWA Y.
Department of Materials Engineering, University of Tokyo
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LIGOWSKI M.
Research Institute of Electronics, Shizuoka University
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ICHIRAKU A.
Research Institute of Electronics, Shizuoka University
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ANWAR M.
Research Institute of Electronics, Shizuoka University
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JABLONSKI R.
Division of Sensors and Measuring Systems, Faculty of Mechatronics, Warsaw University of Technology
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Ligowski M.
Research Institute Of Electronics Shizuoka University
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Ichiraku A.
Research Institute Of Electronics Shizuoka University
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Anwar M.
Research Institute Of Electronics Shizuoka University
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Jablonski R.
Division Of Sensors And Measuring Systems Faculty Of Mechatronics Warsaw University Of Technology
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ISHIKAWA Y.
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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INOKAWA H.
Research Institute of Electronics, Shizuoka University
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KATO H.
Research Institute of Electronics, Shizuoka University
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HORIGUCHI S.
Department of Electric and Electronic Engineering, Faulty of Engineering and Resource Science, Akita
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Ishino T.
Research Institute Of Electronics Shizuoka University
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Ono Y.
Ntt Basic Research Laboratories Ntt Corporation
著作論文
- Photon-induced single-hole-tunneling current modulation in Si multiple-tunnel-junction field-effect transistor
- Photo Illumination Effect on Single-Electron-Tunneling Current Through a Thin Bicrystal SOI FET
- Direct Observation of Freeze-out Effect in Si by Kelvin Probe Force Microscope
- Design Control of Random Dopant-induced Multiple-Tunnel-Junction Arrays for Turnstile Operation
- Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires
- Fowler-Nordheim current oscillations in Si(111)/SiO_2/twisted-Si(111) tunneling structures