YAMAGUCHI H. | NTT Basic Research Laboratories, NTT Corporation
スポンサーリンク
概要
関連著者
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YAMAGUCHI H.
NTT Basic Research Laboratories, NTT Corporation
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ONO Y.
NTT Basic Research Laboratories, NTT Corporation
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NISHIGUCHI K.
NTT Basic Research Laboratories, NTT Corporation
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FUJIWARA A.
NTT Basic Research Laboratories, NTT Corporation
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Nishiguchi K.
Ntt Basic Research Laboratories Ntt Corporation
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Inokawa H.
Shizuoka Univ.
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Ono Y.
Ntt Basic Research Laboratories Ntt Corporation
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Fujiwara A.
Ntt Basic Research Laboratories Ntt Corporation
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UEKI M.
NTT Electronics Techno Inc.
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HIRAYAMA Y.
NTT Basic Research Laboratories, NTT Corporation
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Wu N.
Institute Of Semiconductor Chinese Academy Of Sciences
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Zhang W.
NTT Basic Research Laboratories
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Inokawa H.
Shizuoka University
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Takahashi Y.
Hokkaido University
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MAHBOOB Imran
NTT Basic Research Laboratories
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Mahboob Imran
Ntt Basic Research Laboratories Ntt Corporation
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OKAMOTO H.
NTT Basic Research Laboratories, NTT Corporation
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Chang C.
Department Of Anatomy Taipei Medical University
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Butcher M.
Ntt Basic Research Laboratories Ntt Corporation
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Kanisawa K.
NTT Basic Research Laboratories, NTT Corporation
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TOKURA Y.
NTT Basic Research Laboratories, NTT Corporation
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Lin Y.
Department Of Materials Science And Engineering National Chiao Tung University
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Chang C.
Department Of Materials Science And Engineering National Chiao Tung University
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INOKAWA H.
Research Institute of Electronics, Shizuoka University
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TAKAHASHI Y.
Graduate School of Information Science and Technology, Hokkaido University
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Tokura Y.
Ntt Basic Research Laboratories Ntt Corporation
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CHANG E.
Department of Materials Science and Engineering, National Chiao Tung University
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Kanisawa K.
Ntt Basic Research Laboratories Ntt Corporation
著作論文
- Magnetopiezoresistance effects in an InAs/AlGaSb nanomechanical resonator with extremely small power consumption
- Two-Dimensional Friedel Oscillations and Electron Confinement to Nanostructures at a Semiconductor Surface
- Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II,AWAD2006)
- Transfer and Detection of Single Electrons using Metal-Oxide-Semiconductor Field-Effect-Transistors(Session 8B Emerging Devices and Technologies II)
- Infrared detection with silicon nano transistors
- Growth of InAs Channel HEMT Structure on Si substrate and It's Possible Application for Low Power Logic