True Meaning of "Localized" f-Electrons Measured by dHvA Experiments in Ce-Based Heavy Fermion Metals (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)

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概要

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• The true meaning of the terms "localized" and "itinerant", frequently used in the interpretations of de Haas-van Alphen (dHvA) experiments of Ce-based heavy fermion metals, is argued. If the magnetic field H used in a dHvA measurement is larger than the threshold value of the order of the hybridization gap, the majority band of the quasiparticles would be filled up, and the Fermi surface (FS) would shift to the surface on which the conduction electrons have the Fermi energy without H. Then, the total number of electrons wrapped by the FS appears to decrease by one (f) electron per unit cell of the lattice. This phenomenon has been regarded as the "localization" of f-electrons, although f-electrons are never localized. As explicit examples, the transformation of the FS in CeRhIn_5 and CeIn_3 under pressure and that in CeRu_2Si_2 near a pseudo-metamagnetic transition are discussed.

• 社団法人日本物理学会の論文
• 2006-03-15

著者

• Miyake Kazumasa

  Division Of Endocrine Surgery Kawasaki Medical School.

• Ikeda Hiroaki

  Department Of Cancer Vaccine Mie University Graduate School Of Medicine

• Miyake Kazumasa

  Division Of Materials Physics Department Of Materials Engineering Science

• Ikeda Hiroaki

  Department Of Physics Kyoto University

• MIYAKE Kazumasa

  Division of Materials Physics, Department of Materials Engineering Science

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