CRYSTALLIZATION OF AMORPHOUS Si AND Ge PREPARED ON Si(111) AND Ge(111) SURFACES BY ARGON ION BOMBARDMENT
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概要
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Amorphous thin layers have been formed on Si(111) and Ge(111) clean surfaces by argon ion bombardment and the recovery process of the layers has been in-situ observed by means of reflection high energy electron diffraction (RHEED). When amorphous layers, 40Å or more in thickness, are annealed, a complex structure containing a lot of {111} twins first occurs on the way of the recovery and then changes to a single crystal surface with a good flatness on the atomic scale.
- 東北大学の論文
著者
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Ino Shozo
The Research Institute For Iron Steel And Other Metals Tohoku University
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Ino Shozo
The Research Institute For Iron Steel And Other Metals
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ICHIKAWA Toshihiro
The Research Institute for Iron, Steel and Other Metals, Tohoku University
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Ichikawa Toshihiro
The Research Institute For Iron Steel And Other Metals Tohoku University
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Ichikawa Toshihiro
The Research Institute For Iron Steel And Other Metals
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INO Shozo
The Research Institute for Iron, Steel and Other Metals, Tohoku University
関連論文
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