The Relationship between the Hall Coefficient and the Resistivity of Semiconductors, Taking Various Scattering Mechanisms of the Charge Carriers into Account
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概要
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Jones has given an expression for the Hall coefficient of semi-conductors taking into account both the thermal and the ionized impurity scattering of electrons (or holes) in a band. As temperature decreases the influence caused by neutral impurity scattering and dislocation scattering becomes appreciable. Taking into consideration every two scattering mechanisms out of four mechanisms mentioned above, the relations between the Hall coefficient and the resistivity are calculated in a way analogous to that of Jones.
- 東北大学の論文
著者
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FUKUROI Tadao
The Resarch Institute for Iron, Steel and Other Metals
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Yamanouchi Chikako
The Research Institute For Iron Steel And Other Metals
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