Electrical Properties of Antimony-Doped Tellurium Crystals

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Electrical resistivity, Hall effect and thermoelectric power of tellurium crystals alloyed with antimony of quantities between 0.002 and 5 atomic per cent have been measured in the temperature range from liquid air temperature to 300℃, and the data are compared with the properties of pure tellurium crystals with a view to clarifying the change of electrical properties accompanying the increase of acceptor impurities. The Values of resistivity and Hall coefficient at about 15℃ distribute from 4.2×10^<-1> to 1.7×10^<-3> ohm-cm and from -3.6×10^3 to +3.25 emu respectively as observed for twelve specimens containing antimony up to 5 per cent ; and the density and mobility of holes calculated from the above data range from 2.3×10^<15> to 2.3×10^<19> per cm^3 and from more than 4.9× 10^2 to 1.6×10^2 cm^2/volt-sec respectively. Tenth or hundredth parts of added antimony atoms are deemed to yield the acceptor levels having little or no excitation energy in the temperature range under study. The decrease in hole mobilities with the increase of antimony addition are concluded to be due to the predominance of acceptor ion scattering. Thermoelectric power shows a temperature dependence having a maximum at low temperatures and a minimum at intermediate temperatures in the pure specimens, while it tends to show monotonous characteristics having a roughly linear increase with temperature rise in accordance with the increase of antimony concentration.
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Electrical Properties of Antimony-Doped Tellurium Crystals

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