Thermoelectric Power of the Non-Polar Semiconductor, That of Tellurium Crystals as an Example

概要

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In order to explicate the experimental results on the thermoelectric power of the crystals of pure tellurium and those alloyed with antimony less than 5 per cent, the thermoelectric power of the non-polar composite semiconductor in general has been derived as follows, Chemical formula, where φ is the height of the electrochemical potential above the valence band, 〓E(T) =〓E(0)+βT is the width of forbidden band, m_e and m_h are effective masses of electrons and holes, b is the ratio of electron and hole mobilities and χ is the energy required to extract the electron at the top of the valence band to rest outside of the crystal. Numerical calculations carried out for tellurium crystals have shown that the measured characteristics can well be accounted for throughout the temperature range being studied. The quantitative discordance observed at higher temperatures has been explained by a more or less elaborated theory in which a dual band structure which consists of two overlapped energy bands is assumed for the conduction band, the same band scheme being compatible with other electric properties of tellurium.
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