Role of O_2 in Aluminum Etching with BCl_3/Cl_2/O_2 Plasma in High Density Plasma Reactor
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-10-15
著者
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Lee Won
System Ic R&d Center Hynix Semiconductor Inc.
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Lee Won
System Ic R & D Center Hyundai Electronics Industries Co. Ltd.
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Lee Won
System Ic R&d Center Hyundai Electronics Industries Co. Ltd.
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Lee W
Hynix Semiconductor Inc. Cheongju‐si Kor
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Baek Kye
System IC R & D Center, Hyundai Electronics Industries Co., Ltd.
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Beak Kye
System IC R&D Center, Hyundai Electronics Industries Co., Ltd.
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Park Changwook
System IC R&D Center, Hyundai Electronics Industries Co., Ltd.
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Beak Kye
System Ic R&d Center Hynix Semiconductor Inc.
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Park Changwook
System Ic R&d Center Hyundai Electronics Industries Co. Ltd.
関連論文
- Effects of N_2 Addition on Aluminum Alloy Etching in Inductively Coupled Plasma Source
- Bowing Profile Induced by Ion Implant Damage during Silicon Gate Etching
- Role of O_2 in Aluminum Etching with BCl_3/Cl_2/O_2 Plasma in High Density Plasma Reactor
- Effects of Gas Species on Charging Induced Tungsten Plug Corrosion during Post Metal Etch Process
- Role of O2 in Aluminum Etching with BCl3/Cl2/O2 Plasma in High Density Plasma Reactor