Bowing Profile Induced by Ion Implant Damage during Silicon Gate Etching

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-02-15

著者

• Lee Won

  System Ic R&d Center Hynix Semiconductor Inc.

• Lee Won

  System Ic R & D Center Hyundai Electronics Industries Co. Ltd.

• Park Kun

  System Ic R&d Center Hynix Semiconductor Inc.

関連論文

• Effects of N_2 Addition on Aluminum Alloy Etching in Inductively Coupled Plasma Source
• Bowing Profile Induced by Ion Implant Damage during Silicon Gate Etching
• Role of O_2 in Aluminum Etching with BCl_3/Cl_2/O_2 Plasma in High Density Plasma Reactor
• Role of O2 in Aluminum Etching with BCl3/Cl2/O2 Plasma in High Density Plasma Reactor

スポンサーリンク