Electrical Characterization of Micro Defects in Silicon Crystal : C-3: CRYSTAL TECHNOLOGY
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-04-30
著者
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Ikuta Kenji
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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TAKAOKA Hidetoshi
Musashino Electrical Communication Laboratory, NTT
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TATSUOKA Yutaka
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takaoka Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Tatsuoka Yutaka
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
関連論文
- Photo-Deep-Level Fourier Spectroscopy in Semi-Insulating Bulk Materials
- Effect of Stacking Faults on Carrier Generation in a Silicon Depletion Layer
- Electrical Characterization of Micro Defects in Silicon Crystal : C-3: CRYSTAL TECHNOLOGY
- Stacking Faults from Oxide Precipitates in CZ Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski Silicon
- Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters