Stacking Faults from Oxide Precipitates in CZ Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-03-01
著者
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Inoue Naohisa
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Inoue Naohisa
Musashino Electrical Communication Laboratory Nippon Tel
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TAKAOKA Hidetoshi
Musashino Electrical Communication Laboratory, NTT
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OOSAKA Jiro
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation
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Takaoka Hidetoshi
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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Oosaka Jiro
Musashino Electrical Communication Laboratory Nippon Telegraph And Telephone Public Corporation
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- Electrical Characterization of Micro Defects in Silicon Crystal : C-3: CRYSTAL TECHNOLOGY
- Stacking Faults from Oxide Precipitates in CZ Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- Growth of Stacking Faults by Bardeen-Herring Mechanism in Czochralski Silicon
- Deep Level Fourier Spectroscopy for Determination of Deep Level Parameters
- Inhomogeneous Oxygen Precipitation and Stacking Fault Formation in Czochralski Silicon